Study of hot-electron assisted programming for split-page 3D vertical gate (VG) NAND flash
Kuo-Pin Chang, Hang-Ting Lue, Chih-Shen Chang, Wen-Wei Yeh, Chih-Chang Hsieh, Yi-Hsuan Hsiao, Yen-Hao Shih, Chih-Yuan Lu · 2013
A 3D NAND test chip is fabricated to study hot-electron assisted programming. By modifying the local self-boosting method, channel potential is locally boosted, resulting in a large lateral electric field and in turn producing band-to-band tunneling generated hot-electron injection around the selected WL. The hot-electron assisted programming can greatly reduce the maximum programming bias and improve the programming speed. However, hot-electron programming also causes new program disturb modes, and the programming speed depends on the WL location. These are studied in detail.