Design and characterization of a wideband p-HEMT low noise amplifier
Arpit Kumar, Nagendra Prasad Pathak · 2014
This paper reports a pseudomorphic high electron mobility transistor (HEMT) wide band low noise amplifier (LNA) for WLAN, vehicle communication systems and point to point communication applications. The LNA had been designed by using a single ATF36163 transistor. A wide band bias network has been designed and verified over the desired frequency range. The fabricated prototype of the proposed LNA has a gain of 2.5 dB with a noise figure (NF) of 1.3 dB over the frequency range of 5-6 GHz. The designed amplifier has bandwidth of 1 GHz over the frequency range from 5-6 GHz.