Application of an excess number of piezoresistors for the improvement of the properties of piezoresistive sensors
Janusz Zelezik · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1997
The paper presents a method allowing to reduce the initial offset voltage in piezoresistive sensors. It has been suggested in the work that the number of piezoresistors formed on the surface of the membrane should exceed 4, and the active elements should be selected for the bridge according to the offset minimization criterion during the spike measurements of the structures. A few execution versions of excess piezoresistors have been analyzed, carrying out simulation calculations for each of them to evaluate their performance. In the opinion of the author, the results of the calculations, presented in this tabular and graphic forms, are encouraging. The reduction of the offset voltage entails also the reduction of the temperature zero error. Lower offset and smaller temperature zero error in the crude sensors result in better quality of the sensors after the compensation of errors.