800 MB/s DDR NAND Flash Memory Multi-Chip Package With Source-Synchronous Interface for Point-to-Point Ring Topology
Peter Gillingham, David Chinn, Eric Choi, Jin‐Ki Kim, Don Macdonald, HakJune Oh, Hong-Beom Pyeon, Roland Schuetz · IEEE Access · 2013
A 256 Gb NAND flash memory multi-chip package (MCP) includes eight stacked 32 Gb 2 bit/cell multi-level cell (MLC) die and an 11.6 mm2HyperLink NAND bridge chip providing four internal NAND channels for concurrent memory operations. The bridge chip provides an external 1.2 V unidirectional byte-wide point-to-point source-synchronous double data-rate (DDR) interface for low power 800 MB/s operation in a ring topology. Interface power is reduced by shutting down the phase-locked loop in every second MCP and alternating between edge aligned DDR clock and center aligned DDR clock for source-synchronous data transfer from MCP to MCP.