Numerical simulation of the process of hydrogenation of GaAs
Valerii A. Kagadei, E. V. Nefyodtsev · Semiconductors · 2009
The evolution of concentration profiles for all types of hydrogen particles, charge carriers, and active dopants in the surface region of p -GaAs during hydrogenation is simulated. The numerical experiment is conducted on the basis of the least-simplified comprehensive mathematical model. The regular trends in accumulation and transport of hydrogen particles and the role of the electric field in these processes are discussed. The numerical and analytical calculations serve to validate the small efficiency of formation for hydrogen-dopant complexes at typical temperatures of hydrogenation for GaAs ( T > 150°C).