Trends in systematic nonparticle yield loss mechanisms and the implications for IC design
CARL N. BERGLUND · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003
Semiconductor industry yield trends from the 500 nm generation are described that illustrate traditional random defect yield loss mechanisms have been found to be less and less important relative to the yield loss caused by systematic and primarily non-particle mechanisms as semiconductor processes have moved to sub-wavelength lithography. While part of the reason for this is the continued particulate defect reduction success due to better equipment and fab procedures, a more important reason is the increase in systematic mechanisms driven in large part by the rapidly increasing process complexity and decreasing process parameter “windows” required as processes moved through the generations. In this paper these yield loss trends are reviewed and projected to the 130nm and beyond technology nodes, and the implications for effective IC design and design methodology discussed.