RePRAM: Re-cycling PRAM faulty blocks for extended lifetime
Jie Chen, Guru Venkataramani, H. Howie Huang · 2012
As main memory systems begin to face the scaling challenges from DRAM technology, future computer systems need to adapt to the emerging memory technologies like Phase-Change Memory (PCM or PRAM). While these newer technologies offer advantages such as storage density, non-volatility, and low energy consumption, they are constrained by limited write endurance that becomes more pronounced with process variation. In this paper, we propose a novel PRAM-based main memory system, RePRAM (Recycling PRAM), which leverages a group of faulty pages and recycles them in a managed way to significantly extend the PRAM lifetime while minimizing the performance impact. In particular, we explore two different dimensions of dynamic redundancy levels and group sizes, and design low-cost hardware and software support for RePRAM. Our proposed scheme involves minimal hardware modifications (that have less than 1% on-chip and off-chip area overheads). Also, our schemes can improve the PRAM lifetime by up to 43× (times) over a chip with no error correction capabilities, and outperform prior schemes such as DRM and ECP at a small fraction of the hardware cost. The performance overhead resulting from our scheme is less than 7% on average across 21 applications from SPEC2006, Splash-2, and PARSEC benchmark suites.