A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface
Hyung-Gon Kim, Jung-hoon Park, Kitae Park, Pansuk Kwak, Oh-Suk Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jung-Ho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sung-Jun Kim, Sungsoo Lee, Kye-Hyun Kyung, Yong-Ho Lim · 2010
We present a 159 mm232 Gb MLC NAND Flash that is capable of 200 MB/S read and 12 MB/S write throughputs in 32 nm technology. This performance is achieved by using DDR interface and by using new core memory and data path architecture as well as program algorithm.