Selective etching characteristics of HF for Al x Ga 1-x As/GaAs
X.S. Wu, L. A. Coldren, James L. Merz · Electronics Letters · 1985
The first detailed report of the selective etching characteristics of an AlxGa1-xAs/GaAs DH wafer (x≥0.4) in an HF system is given. Selective etching at a cleaved facet and a calculation of the energy of activation are included.