A high speed 16 kbit ECL RAM
K. Toyoda, Miki Tanaka, H. Isogai, C. Ono, Y. Kawabe, H. Goto · IEEE Journal of Solid-State Circuits · 1983
A 16384 /spl times/ 1 bit ECL RAM (emitter coupled logic random access memory) with an access time of 15 ns and a power dissipation of 700 mW has been developed. The high packing density and performance were achieved by using a p-n-p load cell, a novel ECL circuit, and U-groove isolation. The test results proved that a p-n-p load cell is very effective in producing a fast high-density bipolar RAM having a capacity of over 64 Kbits.