Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device
Yosuke Komori, M. Kido, Masaru Kito, Ryota Katsumata, Yoshiaki Fukuzumi, Hiroyasu Tanaka, Yuzo Nagata, Megumi Ishiduki, Hideaki Aochi, Akihiro Nitayama · 2008
Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.