Design of AND and NAND Logic Gate Using NDR-BASED Circuit Suitable for CMOS Process
Dong-Shong Liang, Cheng‐Chi Tai, Kwang-Jow Gan, Cher-Shiung Tsai, Yaw-Hwang Chen · 2006
AND and NAND logic gate based on the negative differential resistance (NDR) device is demonstrated. This NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage curve by suitably arranging the MOS parameters. The devices and circuits are implemented by the standard 0.35mum CMOS process