Vertical AND (V-AND) array: High density, high speed, and reliable flash array
Il Han Park, Seongjae Cho, Jung Hun Lee, Gil Seong Lee, Doo-Hyun Kim, Jang-Gn Yoon, Yoon Hee Kim, Sangwoo Kang, Il Hwan Cho, Daewoong Kang, Jong Duk Lee, Byung‐Gook Park · 2007
This paper proposes a novel V-AND array, and characterizes its memory performances through 3-D simulation. High density AND array is possible due to the vertical channel structure, and the program operation using the DEBI effect removes the program disturbances effectively. By virtue of high density, fast sensing speed, and high reliability, V-AND can be a good candidate for the next generation mass storage flash memories.