Erratic Erase In ETOX/sup TM/ Flash Memory Array
Ong, Fazio, Mielke, Pan Pan, Righos, Atwood, Lai · 1993
In this paper, we will report, for the first time, an erratic erase behavior of ETOX^TM flash memory array during cycling. We find that erase behavior of ETOX^TM flash array varies randomly from cycle to cycle in an unpredictable manner. Such an erratic erase is believed to be caused by hole trapping/detrapping in tunnel oxide.