Failure analysis of high-density CMOS SRAMs: using realistic defect modeling and I/sub DDQ/ testing
S. Naik, Frank Agricola, Wojciech P. Maly · IEEE Design & Test of Computers · 1993
A rapid failure analysis method for high-density CMOS static RAMs (SRAMs) that uses realistic defect modeling and the results of functional and I/sub DDQ/ testing is presented. The key to the method is the development of a defect-to-signature vocabulary through inductive fault analysis. Results indicate that the method can efficiently debug the multimegabit-memory manufacturing process.>