A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme
A Kharitonov Igor, C. Trevis, Ali Sheikholeslami · IEEE Journal of Solid-State Circuits · 2003
A 256×144-bit TCAM is designed in 0.18-μm CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed match-line (ML) sense scheme reduces power consumption by minimizing switching activity of search-lines and limiting voltage swing of MLs. The scheme achieves a match-time of 3 ns and operates at a minimum supply voltage of 1.2 V.