STRESS-RELATED PHENOMENA AT GROOVING EDGES IN HETEROEPITAXIAL GARNET FILMS
D. Klein, J. Engemann · Le Journal de Physique Colloques · 1985
The domain wall structures in (111)-oriented garnet films with local magnetic anisotropies and fields at abrupt changes in film thickness are investigated theoretically using the RITZs method. It is found that the internal structure of domain walls in the immediate vicinity of grooving edges is distorted. Since a topographic shaping of a garnet film is used for setting a one-dimensional potential for vertical Bloch line propagation in the Bloch line memory, the actual forces required to move the wall will be somewhat higher as compared to walls far away of such abrupt changes in film thickness.