Design of a CMOS transducer interface for an UV silicon sensor
Alejandro Díaz-Méndez, M. Rocha-Perez, Mariano Aceves, J. Pedraza, E. Gomez, Carlos Domı́nguez, Ángel Merlos, Xavier Formatjé · 2010
This paper presents the cointegration of an UV silicon sensor with extended responsivity, and its conditioning circuit. The sensor's output current is converted to a digital code for subsequent processing. Post-layout results shows a suitable response in order to obtain a digital code corresponding to sensor photocurrent in the range of 200 to 1100nm. The circuit has been designed in a CNM 2.5μm CMOS technology.