A study of quantum lithography for diffraction limit
Sang-Kon Kim · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011
Since the diffraction limit of Rayleigh criterion hardly creates finer features, the development of technologies beyond the diffraction limit is a key merit without the shorter-wavelength source tool. In this paper, nano-phenomena to beat the Rayleigh criterion are described. For quantum lithography, collective behaviour of N-photon entangled states is modeled and simulated to show the effect of photon entangled states to 3-dimensional arbitrary pattern formation.