Intel's EUV resist development
Heidi B. Cao, Jeanette M. Roberts, Janel Dalin, Manish Chandhok, Robert P. Meagley, Eric M. Panning, Melissa K. Shell, Bryan J. Rice · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003
The success of extreme ultraviolet (EUV) lithography depends upon developing resists that meet the patterning requirements for the technology node in which EUV is inserted. This paper presents Intel’s patterning requirements and development strategies for EUV resists. Two of the primary problems for EUV resists are meeting the linewidth roughness (LWR) requirement, and reducing resist absorbance to obtain good sidewall profiles. Benchmarking data shows that none of the current EUV photoresists meet LWR targets. Modeling results for EUV resists show the impact of resist absorbance on sidewall angle and resolution.