Compact Models for the I-V Characteristics of Double Gate and Surround Gate MOSFETs
HEDLEY C. MORRIS, Ellis Cumberbatch, Henok Abebe, Vance C. Tyree · 2006
The models presented by Lu and Taur, for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present compact solutions for the equations based on the Lambert function. These solutions are shown to be accurate compared with exact numerical solutions.