New Method of Dispersion Minimization of Si p-n Junction Temperature Sensors
Vasyl Yatsuk, Olena Basalkevych, Yu. V. Yatsuk, Anatoliy Sachenko · 2007
The mathematical model of a Si p-n junction temperature sensor, in which all physical processes are under consideration, is developed. The method of conversion characteristic dispersion minimization is proposed. It implies the modulation of measuring current with the further estimation of voltage drops on a p-n junction. Conducted mathematical modeling and a digital thermometer experimental device have testified main theoretical assumptions.