MLC nand flash retention error recovery scheme through word line program disturbance
Haozhi Ma, Hongfei Zou, Liyang Pan, Jun Xu · 2014
Aggressive scaling down of Nand Flash induced serious reliability degeneration. Endurance and data retention lifetime deteriorated has become important scaling barrier. In this paper we propose a data retention reliability enhancing scheme through word line program disturbance (RE-WPD) for high scaled Nand Flash. The key ideal of RE-WPD is injecting extra electrons into floating gate through word line program disturbance, and recovers data retention errors due to floating gate charge leakage. As the result, 54% data retention bit error rate and 67% endurance improvement is achieved on commercial 2Xnm MLC Nand Flash.