Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology
Gouri Sankar Kar, L. Breuil, Pieter Blomme, Hubert Hody, Sabrina Locorotondo, Nico Jossart, Olivier Richard, Hugo Bender, Geert Van den Bosch, Ingrid Debusschere, Jan Van Houdt · 2012
For the first time we demonstrate ultra-thin hybrid floating gate (HFG) planar NVM cell performance and reliability. Results not only confirm the high potential of the HFG thickness scaling down to 4 nm with improved program performance, but also show excellent post cycling data retention and P/E cycling endurance. The optimized ultra-thin HFG planar cells show potential for manufacturability and scalability for high density memory application.