Numerical analysis of abrupt heterojunction bipolar transistors
Antonio Jesus Garcia-Loureiro, Juan Miguel López González, Tomás F. Pena, Lluı́s Prat · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 1998
This paper presents a physical–mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift–diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter–base interface. Fermi–Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd.