Technology migration study of digital CMOS temperature sensors
Jinn‐Shyan Wang, Zongwu He, Jen-Hsiang Lee, Shang-Yi Lee · 2014
Based on a truly all-digital 90-nm CMOS temperature sensor (TS), evaluation results of 40-/28-nm CMOS TSs designed by technology migration methodology are described in this paper. Stacked inverters and a new 1-point calibration method can be used to reduce the sensing errors by more than 60% and 80% for 40- and 28-nm TSs, respectively.