Nanoelectronic circuit architectures based on single-electron turnstiles
Wan-Cheng Zhang, Nanjian Wu · 2008
Single-electron devices (SEDs) have ultra-low power dissipation and high integration density, which make them promising candidates as basic circuit elements of the next generation VLSI circuits. In this paper, we propose two novel circuit single-electron architectures: the single-electron simulated annealing algorithm (SAA) circuit and the single-electron cellular neural network (CNN). We used the MOSFET-based single-electron turnstile as the basic circuit element. The SAA circuit consists of the voltage-controlled single-electron random number generator and the single-electron multiple-valued memories (SEMVs). The random-number generation and variable variations in SAA are easily achieved by transferring electrons using the single-electron turnstile. The CNN circuit used the floating-gate single-electron turnstile as the neural synapses, and the number of electrons is used to represent the cells states. These novel circuits are promising in future nanoscale integrated circuits.