Improved performance of multi-giga bit NAND flash using channel orientation
Hye Jin Cho, Byung Young Choi, Hee Soo Kang, Suk‐Kang Sung, Tae Hun Kim, Byung Kyu Cho, Donguk Choi, Albert Fayrushin, Jong Ho Lim, Ji-Hwon Lee, Andrew T. Kim, Hong-shik Kim, In‐Sun Jung, Yonghan Roh, C.-H. Lee, Kyucharn Park, Donggun Park · 2006
In this paper, we report the enhanced performance of multi-giga bit NAND flash memory through the combined effects of uniaxial compressive stress and-oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60 nm) flash cell. Reduced interface trap with the active edge ofchannel resulted in the endurance characteristic improvement ~5%.