A new simulator for the oxidation process in integrated circuit fabrication based on cellular automata
Georgios Ch. Sirakoulis, Ioannis G. Karafyllidis, Dimitrios Soudris, N. Georgoulas, A. Thanailakis · Modelling and Simulation in Materials Science and Engineering · 1999
A new two-dimensional oxidation simulator based on cellular automata is presented. The advancement of the Si-SiO 2 and SiO 2 -air fronts during oxidation has been successfully simulated. The simulator reproduced satisfactorily the oxidation profiles in the case of a Gaussian temperature distribution over the Si surface, as well as in the case of the presence of contamination on the Si surface. Oxidation of non-planar Si surfaces, as well as oxidation through a mask, and oxidation through a mask of non-planar Si surfaces have also been successfully simulated. The simulation results are in good qualitative agreement with experimental data.