Exploit imbalanced cell writes to mitigate write disturbance in dense phase change memory
Rujia Wang, Lei Jiang, Youtao Zhang, Linzhang Wang, Jun Yang · 2015
Recent studies have shown that Phase Change Memory faces significant write disturbance (WD) when scaling in deep submicron regime, i.e., resetting a cell may disturb the values of its adjacent cells if these cells are in amorphous state. A preventive approach to mitigate WD errors is to allocate sufficient inter-cell thermal band. However, this approach greatly reduces chip capacity due to low cell density. A cost effective approach VnC (verify-and-correct), relies on Verification after each write and Correction if errors do happen. Simple VnC improves chip capacity but introduces large performance degradation.