Electrostatic Formation of Coupled Si/SiO2Quantum Dot Systems
Per Hyldgaard, Henry K. Harbury, Wolfgang Porod · VLSI design · 1998
We present three‐dimensional numerical modeling results for gated Si/SiO2 quantum dot systems in the few‐electron regime. In our simulations, the electrostatic confining potential results from the Poisson equation assuming a self‐consistent Thomas‐Fermi charge model. We find that a very thin SiO2 top insulating layer allows an effective control with single‐electron confinement in quantum dots with radius less than 10nm and investigate the detailed potential and resulting charge densities. Our three‐dimensional finite‐element modeling tool allows future investigations of the charge coupling in gated few‐electron quantum‐dot cellular automata.