Determination of the geometrical configuration of Bi on GaAs (110) by x-ray standing wave triangulation
Alberto Herrera‐Gómez, T. Kendelewicz, J. C. Woicik, Ken E. Miyano, P. Pianetta, Stephen H. Southworth, Paul L. Cowan, Barry A. Karlin, W. E. Spicer · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993
Triangulation from x-ray standing wave applied to three Bragg planes, together with symmetry considerations, have established the geometrical structure of epitaxial Bi overlayers on GaAs (110). Our results are consistent with the epitaxial continued layer structure model. Our analysis is based on prior experimental results that indicate two equally populated Bi sites.