Numerical calculation of the ideal c/v characteristics of nonuniformly doped m.o.s. capacitors
H. El-Sissi, R.S.C. Cobbold · Electronics Letters · 1973
A new and highly efficient method for calculating the ideal C/V characteristics of nonuniformly doped m.o.s. capacitors is described. Compared with previously described procedures, this method decreases the computation time by more than an order of magnitude. Results for an ion-implanted Gaussian profile are presented.