Advanced Hot-Carrier Injection Programming Scheme for Sub 20nm NAND Flash Cell and beyond
Sang-Tae Ahn, Kyung-Sik Mun, Keun Woo Lee, Gyu-Seog Cho, Sung-Kye Park, Seokkiu Lee, Sung-Joo Hong · 2012
A novel hot-carrier programming method for 20-nm-node technology NAND Flash cell is presented. In order to suppress the program disturb and the large power consumption, we utilized the self-channel boosting techniques with floated WLn-1, switching SSL, and a sufficiently high local field to cause efficient hot-carrier injection in NAND string. This method has been successfully demonstrated in the 20-nm-node NAND Flash cells, along with comprehensive studies on various bias conditions and algorithm. It would be very attractive for further scaling in NAND Flash memories beyond 20-nm technology.