An experimental study on deep level incorporation and background doping in hydride VPE GaAs
B. Diegner, Hanna Weinert, Rainer Pickenhain, W. Hörig · physica status solidi (a) · 1986
The electrical properties (Hall, PL, DLTS data) of undoped hydride VPE GaAs layers are presented. The properties of deep electron traps in this material are discussed. The variation of the layer properties in dependence on a variation of the gas phase Ga/As ratio is compared for two series of experiments. Only in one series characterized by GaCl partial pressure variation an optimum in electrical properties, depending on actual growth conditions, is found. The crucial parameter for the determination of such optimum growth conditions is the GaCl partial pressure.