The effect of hydrogen on program disturbance in sub-2ynm Nand flash
Jaewook Yang, Won-Hyo Cha, Shinwon Seo, Haesoon Oh, Jeongseob Oh, Hyunyoung Shim, Sekyoung Choi, Byung-Kook Kim, Seokwon Cho, Kiseog Kim, Kun-Ok Ahn, Gihyun Bae · 2013
The Effect of hydrogen on program disturbance in sub-2ynm NAND flash is studied. It is supposed that boron atoms implanted for field stop are deactivated due to the formation of neutral boron-hydrogen pair. Boron deactivation results in the degradation of STI leakage and program disturbance. By adopting hydrogen reducing process, program disturbance of 2ynm NAND flash is successfully improved.