Application of adaptive network theory to dry-etch monitoring and control
V. G. I. Deshmukh, D. A. O. Hope, Tim I. Cox, Alan J. Hydes · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1991
Initial results on the application of adaptive network concepts to the problem of dry etching control are given in this paper. The role of off-line experimentation and analysis in defining a suitable parametric model for a dry etching process is first described. Alternative methods of parameter estimation are compared. An embryonic on-line regulator is then outlined. This has been used to control a parameter of interest namely the bias at the wafered electrode DCBW of a reactive ion etching (RIE) station. Successful tracking of a randomized trajectory for DCBW is demonstrated.