From performance validation to volume introduction of ASML's NXE platform
H. Meiling, Wim de Boeij, Frank Bornebroek, Noreen Harned, Ivo de Jong, Peter Kürz, Martin Lowisch, H.C. Meijer, David C. Ockwell, Rudy Peeters, Eelco van Setten, Judon M. D. Stoeldraijer, Christian C. Wagner, Stuart Young, Ron Kool · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2012
ASML's NXE platform is a multi-generation TWINSCAN™ platform using an exposure wavelength of 13.5nm, featuring a plasma source, all-reflective optics, and dual stages operating in vacuum. The NXE:3100 is the first product of this NXE platform. With a 0.25 NA projection optics, a planned throughput of 60 wafers/hr and dedicated chuck overlay of 4 nm, the NXE:3100 is targeted for extreme ultraviolet lithography (EUVL) implementation at 27nm halfpitch (hp) and below. The next generation NXE tools utilize a 0.33NA lens and include off-axis illumination for high volume manufacturing at a resolution down to 16nm hp and a targeted throughput of >100 wafers/hr. We share details of the performance of the 0.25NA lithography products in terms of imaging, overlay, throughput, and defectivity. We will show that we have met the required imaging performance associated with the 27nm hp node. We will also include a summary of the EUV source development, which is a key enabler for cost-effective introduction of EUVL into highvolume manufacturing. Finally, we will highlight some of the technical changes we introduced to enable the transition from 27 to 22nm lithographic performance while introducing our 0.33NA Step & Scan system, the NXE:3300B.