TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory
Timothy R. Oldham, Mark R. Friendlich, James W. Howard, Melanie D. Berg, H. S. Kim, Tim Irwin, Kenneth A. LaBel · 2007
Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10-12 errors/bit-day, for the Adams Ten Percent Worst Case Environment.