A LOW-VARIATION NONLINEAR NEURON CIRCUIT
Hormoz Djahanshahi, Majid A. Ahmadi, GRAHAM A. JULLIEN, WILLIAM C. MILLER · Journal of Circuits Systems and Computers · 1998
A resistive-type neuron circuit is presented that combines nonlinear characteristics of four MOS transistors to realize a saturating function. Despite circuit simplicity, characteristic variations are found to be small based on circuit analyses and fabrication measurements. Maximum variation between neurons within one chip is 1.3%, while worst-case chip-to-chip variation from 10 fabrications is 2.2%.