Various Flash Memory Devices of Novel Design
Jang-Gn Yun, Jong-Duk Lee, Byung‐Gook Park · IETE Technical Review · 2009
AbstractVarious novel flash memory devices for both NOR and NAND types are reviewed. In NOR-type flash memory devices, 2-bit/cell devices and their technology trends are addressed. Furthermore, multi-site charge-trapping schemes with more-than-2-bit/cell operation are also studied in the fin SONOS (silicon oxide-nitride oxide semiconductor) flash memory having independent double gates and the stacked vertical-channel NOR flash memory. In the NAND-type flash memory, devices having extended word-lines are investigated. As well as the short-channel effect, fluctuation and process limitation issues are considered for the highly scaled devices. Some future perspectives, including a stacked array, are discussed for high-density NAND flash memories.