Using Non-Volatile RAM as a Write Buffer for NAND Flash Memory-based Storage Devices
Sung‐Min Park, Jung Ho-Young, Hyoki Shim, Sooyong Kang, Jaehyuk Cha · 2008
Recent development of next generation non-volatile memory types such as MRAM, FeRAM and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). In this paper, we suggest the utilization of small-sized, next-generation NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems. We propose a novel block-based NVRAM write buffer management policy, CLC. Simulation results show that the CLC policy outperforms the traditional policies.