High-efficiency memory BISR with two serial RA stages using spare memories
Iwen E. Kang, Wooyoung Jeong, Sungho Kang · Electronics Letters · 2008
As technology has become more advanced, the density of memory has increased greatly. This development has led to need for a high-efficiency redundancy analysis (RA) algorithm to improve yield rate. Presented is a new methodology that can achieve high-efficiency repair against faults in memory. Experimental results show that the proposed built-in self-repair (BISR) method performs well.