Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields
Edmondo De Salvo, R. Girlanda · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1993
Since within the effective mass approximation the Hamiltonian describing the electronic states of a semiconductor in the presence of crossed electric and magnetic fields contains non local potentials, then the interaction Hamiltonian between matter and radiation field has to be generalized in order to preserve the gauge independence of physical quantities. The two photon interband transition rate between two particular levels is evaluated in both length and velocity gauges demonstrating the correctness of our approach, moreover, the difference with the traditional approach is discussed.