Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency
M. A. Rowe, Eric J. Gansen, Marion B. Greene, Robert H. Hadfield, Todd E. Harvey, M. Y. Su, Sae Woo Nam, Richard P. Mirin, D. Rosenberg · Applied Physics Letters · 2006
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to (68±18)% at 4K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of (53±11)% and dark counts of 0.003 counts per shot.