Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects
Jun Geun Kang, Boram Han, Kyoung-Rok Han, Sung Jae Chung, Gyu-Seog Cho, Sung-Kye Park, Woo Young Choi · 2012
Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration. Also, the program and erase characteristics of NAND flash memory cells have been evaluated depending on the RDF effects.