A Singular Perturbation Analysis of Reverse-Biased Semiconductor Diodes
Franco Brezzi, A.C. Capelo, Lucia Gastaldi · SIAM Journal on Mathematical Analysis · 1989
The one-dimensional equations of semiconductor devices are presented and studied here as a singular perturbation problem. It is shown that the limit problem, for reverse-biased devices, is a variational inequality of double obstacle type, which justifies, in some sense, the so-called total depletion assumption often used by engineers. It is also proven that the solution is unique if the value of the singular perturbation parameter is small enough.