A gate-controlled MISIM switch
Chan Long Shieh, S. Wagner, L. D. Jackel, Richard E. Howard · 1982
We report the first gate-controlled MISIM switch, Its switching voltage can be controlled from 7.2 V to 2.5 V by a gate bias ranging from -5 V to +5 V. The gate-controlled MISIM switch has the capability to address individual devices. This capability is not shared by a substrate current controlled MISIM switch reported earlier. We also fabricated the first substrate current controlled MISIM switch on p-type silicon. This switch has a lower holding current (10\microA) and a lower switching voltage (7.3 V) than the substrate current controlled MISIM switch on n-type silicon. The control of the switching voltage by the substrate current (\sim \microA) also is more effective.