Double-drift diodes for super wideband noise oscillator with increased noise level
P. P. Loshitski, A. V. Pavlyuchenko · 2008
50...70 dB/kT0ENR levels are obtained during avalanche diode in anomaly mode based wideband noise oscillators research. Specially developed impulse method makes double-drift diodepsilas selection possible just as allows to determine drift region chargepsilas asymmetry for obtaining great ENR level.