High Efficiency Performance of Stack-Gate 0.35um P-Channel Flash EPROMs
Shen-Li Chen, Der Jang Tseng · Advanced materials research · 2012
The programming mechanism and erasing efficiency in P-channel flash EPROMs are presented in this paper. With impact ionization programming mechanism, reliability problem is effective reduced. And, the margin of VTH shifts is obvious from –1V to –7.6V for deeply programming or erasing. For the low voltage operation, this high efficiency stack gate flash EPROM can be easily implemented.